DocumentCode :
3731080
Title :
Photoelectrochemical performance of PbS/CdS quantum dot cosensitized TiO2 photoelectrodes
Author :
Enlai Dong; Zhiying Wu; Wei zhang; Chunxi Lu; Lina Zhang; Qiushi Wang; Jinwen Ma; Jing Wang
Author_Institution :
College of New Energy: Bohaiai university Jinzhou, Liaoning, China
fYear :
2015
Firstpage :
1274
Lastpage :
1278
Abstract :
In this work, Narrow band gap CdS and PbS quantum dots are cosensitized TiO2 NTWs array by successive ion layer absorption method(SILAR), and the photoelectrochemi-cal (PEC) performance of the heterostructures is investigated carefully, it is found that the photoelectric properties of QD/TiO2 array film are superior to pure TiO2 array film, and the PbS/CdS/TiO2 array film exhibits the best performance, corres-ponding current density is 2.89mA/cm2 and energy conversation efficiency is 1.68% under an illumination of AM 1.5G. PbS and CdS become a promising sensitized material with high quality properties for practical solar cell applications.
Keywords :
"Radiative recombination","Nitrogen","Atmosphere","Cathodes","II-VI semiconductor materials","Cadmium compounds"
Publisher :
ieee
Conference_Titel :
Chinese Automation Congress (CAC), 2015
Type :
conf
DOI :
10.1109/CAC.2015.7382695
Filename :
7382695
Link To Document :
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