DocumentCode :
37311
Title :
Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code
Author :
Reed, Robert A. ; Weller, Robert A. ; Mendenhall, Marcus H. ; Fleetwood, Daniel M. ; Warren, Kevin M. ; Sierawski, Brian D. ; King, Michael P. ; Schrimpf, Ronald D. ; Auden, Elizabeth C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Volume :
62
Issue :
4
fYear :
2015
fDate :
Aug. 2015
Firstpage :
1441
Lastpage :
1461
Abstract :
MRED is a Python-language scriptable computer application that simulates radiation transport. It is the computational engine for the on-line tool CRÈME-MC. MRED is based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions with high precision. We provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits. Extensive discussion and references are provided that illustrate the validation of models used to implement specific simulations of relevant physical processes. Several applications of MRED are summarized that demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices. These include effects from single particle radiation (including both direct ionization and indirect ionization effects), dose enhancement effects, and displacement damage effects. MRED simulations have also helped to identify new single event upset mechanisms not previously observed by experiment, but since confirmed, including upsets due to muons and energetic electrons.
Keywords :
C++ language; FORTRAN; Monte Carlo methods; electronic engineering computing; radiation effects; CRÈME-MC; Fortran components; Geant4; MRED; Monte Carlo radiative energy deposition code; Python-language scriptable computer application; c++ code; computational engine; displacement damage effects; dose enhancement effects; electron transport; electronic devices; energetic electrons; muons; nuclear reactions; physical processes; radiation effects; radiation transport; single particle radiation; Integrated circuit modeling; Monte Carlo methods; Physics; Production; Radiation effects; Single event upsets; Displacement damage; MRED; Monte Carlo; radiation effects; radiation transport; single event effects; single event upset; total ionizing dose;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2015.2454446
Filename :
7182802
Link To Document :
بازگشت