DocumentCode
3731678
Title
Electrothermal characteristics of carbon-based through-silicon via (TSV) channel
Author
Na Li;Junfa Mao;Wen-Sheng Zhao;Wen-Yan Yin
Author_Institution
Key Lab of Ministry of Education for Research of Design and EMC of High-Speed Electronic Systems, Shanghai Jiao Tong University, Shanghai 200240, China
fYear
2015
Firstpage
9
Lastpage
11
Abstract
In this paper, a carbon-based through-silicon via (TSV) channel, which is composed of vertical carbon nanotube (CNT) TSV and horizontal multilayer graphene (MLG) global wire, is proposed and examined by using an electrothermal co-simulation program. This program is in-house developed based on finite element method (FEM). In particular, both anisotropies and temperature dependences of material parameters, i.e. electrical and thermal conductivities of carbon nanomaterials involved have been treated in an appropriate way. The temperature profile of carbon-based TSV channel is plotted and compared with that of Cu counterpart. It is shown that the carbon-based TSV channel show better heat handling capability although it has slight large voltage drop.
Keywords
"Conductivity","Wires","Thermal conductivity","Temperature","Carbon","Nanomaterials","Graphene"
Publisher
ieee
Conference_Titel
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2015 IEEE
Type
conf
DOI
10.1109/EDAPS.2015.7383662
Filename
7383662
Link To Document