Title :
Analysis of high frequency characteristics of power inverter using accurate IGBT model based on datasheet and measurement
Author :
Hyunwoo Shim;Hongseok Kim;Jinwook Song;Dong-Hyun Kim;Kibum Yoon;Joungho Kim;In-Myoung Kim;Young-Il Kim
Author_Institution :
Korea Advanced Institute of Science and Technology, TERA Laboratory, Dept. Electrical Engineering, Daejeon, South Korea
Abstract :
The output voltage and current from dc-ac inverter generate switching noises and may cause electromagnetic interference (EMI) problems to other electronic systems. To analyze high frequency switching behavior of an inverter accurately, an accurate IGBT model is essential. In this study, an insulated gate bipolar transistor (IGBT) is modeled using datasheet and measurement data to analyze the high frequency characteristics of a high-power full-bridge inverter. The effectiveness of the proposed IGBT model is verified by comparing the simulated results of the inverter using the proposed IGBT model with measured results in frequency domain.
Keywords :
"Insulated gate bipolar transistors","Integrated circuit modeling","Inverters","Semiconductor device modeling","Current measurement","Voltage measurement","Capacitance"
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2015 IEEE
DOI :
10.1109/EDAPS.2015.7383673
