DocumentCode
3731906
Title
Self-cascode active inductor in 65nm bulk CMOS for low power RF oscillator
Author
Priya Meharde;Vandana Niranjan;Ashwni Kumar
Author_Institution
Department of Electronics and Communication, Indira Gandhi Delhi Technical University for Women, New Delhi, India
fYear
2015
fDate
7/1/2015 12:00:00 AM
Firstpage
1
Lastpage
5
Abstract
This paper shows an effective and novel implementation of the self-cascode technique in the design of a CMOS active inductor in 65nm CMOS bulk technology with a triple-well process. The current operated active inductor operates at a self-resonant frequency of 0.447 GHz at a relatively low bias current (less than 150 uA) drawn from a 1.2 V voltage supply. The design methodology of the self-cascode CMOS active inductor is investigated and discussed. A low voltage, differential output LC oscillator is designed using the proposed self-cascode active inductor to assess the feasibility of the latter in RF and microwave circuits. The operation of the circuits proposed in this paper is verified using Cadence simulation tools.
Keywords
"Transistors","Active inductors","Oscillators","Impedance","Q-factor","CMOS integrated circuits","Transconductance"
Publisher
ieee
Conference_Titel
Electronics, Computing and Communication Technologies (CONECCT), 2015 IEEE International Conference on
Type
conf
DOI
10.1109/CONECCT.2015.7383896
Filename
7383896
Link To Document