Title :
Self-cascode active inductor in 65nm bulk CMOS for low power RF oscillator
Author :
Priya Meharde;Vandana Niranjan;Ashwni Kumar
Author_Institution :
Department of Electronics and Communication, Indira Gandhi Delhi Technical University for Women, New Delhi, India
fDate :
7/1/2015 12:00:00 AM
Abstract :
This paper shows an effective and novel implementation of the self-cascode technique in the design of a CMOS active inductor in 65nm CMOS bulk technology with a triple-well process. The current operated active inductor operates at a self-resonant frequency of 0.447 GHz at a relatively low bias current (less than 150 uA) drawn from a 1.2 V voltage supply. The design methodology of the self-cascode CMOS active inductor is investigated and discussed. A low voltage, differential output LC oscillator is designed using the proposed self-cascode active inductor to assess the feasibility of the latter in RF and microwave circuits. The operation of the circuits proposed in this paper is verified using Cadence simulation tools.
Keywords :
"Transistors","Active inductors","Oscillators","Impedance","Q-factor","CMOS integrated circuits","Transconductance"
Conference_Titel :
Electronics, Computing and Communication Technologies (CONECCT), 2015 IEEE International Conference on
DOI :
10.1109/CONECCT.2015.7383896