Title :
Physical model with parameter extraction method for Fuji Electric 1.7kV IGBT
Author :
Shiqi Ji;Ting Lu;Zhengming Zhao;Tatsuhiko Fujihira;Seiki Igarashi
Author_Institution :
Department of Electrical Engineering, Tsinghua University, China
Abstract :
An insulated gate bipolar transistor (IGBT) physical model with field stop cell structure is presented in this paper. The extraction method for all parameters is also given here. The parameters are extracted for Fuji Electric 1.7kV/300A IGBT (2MBI300VN-170-50). The accuracy of the model is verified by experiments.
Keywords :
"Insulated gate bipolar transistors","Mathematical model","Integrated circuit modeling","Semiconductor device modeling","Capacitance","Transient analysis","Logic gates"
Conference_Titel :
Electrical Machines and Systems (ICEMS), 2015 18th International Conference on
DOI :
10.1109/ICEMS.2015.7385103
