DocumentCode :
3733776
Title :
Comparison of silicon carbide MOSFET and IGBT based electric vehicle traction inverters
Author :
Sadik Ozdemir;Fatih Acar;Ugur S. Selamogullari
Author_Institution :
Department of Electrical Engineering Yildiz Technical University Istanbul, Turkey
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper compares Silicon Carbide (SiC) MOSFET and IGBT based electric vehicle (EV) traction inverters by considering the cost and efficiency of these two inverters. Commercially available SiC MOSFET CCS50M12CM2 (1200V / 50A) from Cree and IGBT PM50RL1A120 (1200V / 50A) from Powerex are modeled in detail in PSIM to obtain efficiency curves of inverters under different load conditions. The gained efficiency curves are evaluated using a kinematic model of an EV under three different drive cycles to compare the performance of these two inverters in terms of energy efficiency. Finally, initial cost and operation costs of these two inverters are analyzed.
Keywords :
"Inverters","Silicon carbide","MOSFET","Insulated gate bipolar transistors","Load modeling","Semiconductor device modeling","Vehicles"
Publisher :
ieee
Conference_Titel :
Electrical Engineering and Informatics (ICEEI), 2015 International Conference on
Print_ISBN :
978-1-4673-6778-3
Electronic_ISBN :
2155-6830
Type :
conf
DOI :
10.1109/ICEEI.2015.7387215
Filename :
7387215
Link To Document :
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