Title :
A complete Verilog-A Gate-All-Around junctionless MOSFET model
Author :
Oana Moldovan;Fran?ois Lime;Benjamin I?iguez
Author_Institution :
Department of Electrical Electronic Engineering and Automation, Universitat Rovira i Virgili, Spain
Abstract :
In this paper, we present the results of the implementation of a complete DC and AC Gate-All-Around (GAA) long-channel junctionless MOSFET model in Verilog-A code, which will be further used in commercial circuit simulators. The model in Verilog-A is integrated in the SmartSpice circuit simulator and tested in a CMOS inverter. Both p-channel and n-channel device models are validated. Also, the results are compared with data from 3D numerical simulations, showing a very good agreement in all transistors´ operation regimes.
Keywords :
"Integrated circuit modeling","Semiconductor device modeling","Numerical models","Solid modeling","Mathematical model","MOSFET","Computational modeling"
Conference_Titel :
Design of Circuits and Integrated Systems (DCIS), 2015 Conference on
DOI :
10.1109/DCIS.2015.7388562