Highly sensitive RF energy harvester using gate and bulk self compensation techniques

This paper presents a highly sensitive RF energy harvester. The developed prototype is based on an improved rectifier, that makes use of passive self compensation and biasing techniques to increase the sensitivity and efficiency of the device. These techniques include gate compensation and bulk DC biasing to lower the rectifier transistors threshold voltage. The rectifier exhibits a very high sensitivity of 84 mV at 1 V / 1 μW output voltage and power.