Title :
Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons
Author :
Gobinda Saha;Atanu Kumar Saha;A. B. M. Harun-ur Rashid
Author_Institution :
Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
fDate :
7/1/2015 12:00:00 AM
Abstract :
In this paper double quantum well resonant tunneling negative differential resistance (NDR) device based on intrinsic armchair graphene nanoribbon (A-GNR) is proposed. Non-equilibrium Green´s function (NEGF) based transport equation was coupled with Poisson´s equation to obtain the desired device characteristics. This device shows promising results including the NDR effect at very low bias, at 0.12V, with peak current of 1.78μA and peak to valley current ratio (PVCR) of ~20. We further show that the device performance has strong dependence on back gate voltage.
Keywords :
"Logic gates","Resonant tunneling devices","Graphene","Performance evaluation","Energy states","Resistance","Mathematical model"
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
DOI :
10.1109/NANO.2015.7388632
