• DocumentCode
    3734636
  • Title

    Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons

  • Author

    Gobinda Saha;Atanu Kumar Saha;A. B. M. Harun-ur Rashid

  • Author_Institution
    Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    440
  • Lastpage
    443
  • Abstract
    In this paper double quantum well resonant tunneling negative differential resistance (NDR) device based on intrinsic armchair graphene nanoribbon (A-GNR) is proposed. Non-equilibrium Green´s function (NEGF) based transport equation was coupled with Poisson´s equation to obtain the desired device characteristics. This device shows promising results including the NDR effect at very low bias, at 0.12V, with peak current of 1.78μA and peak to valley current ratio (PVCR) of ~20. We further show that the device performance has strong dependence on back gate voltage.
  • Keywords
    "Logic gates","Resonant tunneling devices","Graphene","Performance evaluation","Energy states","Resistance","Mathematical model"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
  • Type

    conf

  • DOI
    10.1109/NANO.2015.7388632
  • Filename
    7388632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734636