An analytical model for NDC blocks with single-electron tunneling

Negative differential conductance (NDC) blocks find many applications in both digital and analog circuits such as memory cells, Schmitt triggers and oscillators. This paper proposes a new single-electron tunneling (SET) based NDC block, and develops an analytical model which can be used for related circuit designs and/or their performance optimization. Simulation results are provided to show the effectiveness of the model with considerations of temperature effects.