Title :
AlFeO3 nanoparticles: An efficient perovskite material for low operating bias memristive devices
Author :
Mandar M. Shirolkar;Haiqian Wang
Author_Institution :
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, China
fDate :
7/1/2015 12:00:00 AM
Abstract :
We report the preparation and resistive switching properties of AlFeO3 nanoparticles. The high purity AlFeO3 nanoparticles were prepared by chemical route. The purity and multiferroic properties of the nanoparticles were confirmed by different physical characterizations. From the potential application point of view, the prototype device developed with these nanoparticles shows highly stable resistive switching behavior (1-bit operation) for > 102 cycles and under voltage pulse for 103 cycles at low operating bias (± 1 V). The resistive switching properties observed in the nanoparticles do not exhibit correlation with ferroelectric properties and the features were observed without poling the nanoparticles. Thus, AlFeO3 nanoparticles exhibit ferroic and resistive switching both the properties and show promising lead free multiferroic material.
Keywords :
"Nanoparticles","Switches","Magnetoelectric effects","Temperature measurement","Lead","Electrodes"
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
DOI :
10.1109/NANO.2015.7388646