DocumentCode :
3734689
Title :
High-performance of asymmetric FET-based plasmonic THz detector with vertically-integrated antenna in 65-nm CMOS technology
Author :
Min Woo Ryu; Jeong Seop Lee; Kwan Sung Kim; Jong-Ryul Yang; Seong-Tae Han; Kyung Rok Kim
Author_Institution :
School of electrical and computer engineering, Ulsan National Institute of Science and Technology, Republic of Korea
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
59
Lastpage :
62
Abstract :
In this paper, we report the high-performance plasmonic terahertz (THz) detector based on antenna-coupled asymmetric nano-CMOS structure. For maximizing performance enhancement by nano-CMOS technology, asymmetric MOSFET is newly designed on a self-aligned gate structure and vertically-integrated patch antenna in 65-nm CMOS technology. Finally, we obtained the highly enhanced detection performance with responsivity (Rv) of 1.5 kV/W and noise-equivalent-power (NEP) of 15 pW/Hz05 at 0.2 THz.
Keywords :
"Conferences","Nanotechnology","5G mobile communication"
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
Type :
conf
DOI :
10.1109/NANO.2015.7388686
Filename :
7388686
Link To Document :
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