DocumentCode
3734690
Title
High resolution light emitting diode array based on ordered ZnO nanowire/SiGe heterojunction
Author
Renrong Liang;Jing Wang;Jun Xu;Taiping Zhang
Author_Institution
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China
fYear
2015
fDate
7/1/2015 12:00:00 AM
Firstpage
641
Lastpage
644
Abstract
A high resolution light emitting diode (LED) array based on ordered n-type ZnO nanowire/p-type SiGe heterojunction was proposed. The pixel pitch of the LED array is about 15 μm, corresponding to a pixel density of 3175 dpi. The fabrication and characterizations of the developed LED device were studied in detail. It was shown that the electroluminescence emission of this LED device is mainly in infrared range, which is dominated by the band gap of the SiGe alloy.
Keywords
"Zinc oxide","II-VI semiconductor materials","Light emitting diodes","Silicon germanium","Arrays","Heterojunctions","Silicon"
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
Type
conf
DOI
10.1109/NANO.2015.7388687
Filename
7388687
Link To Document