Title :
High resolution light emitting diode array based on ordered ZnO nanowire/SiGe heterojunction
Author :
Renrong Liang;Jing Wang;Jun Xu;Taiping Zhang
Author_Institution :
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China
fDate :
7/1/2015 12:00:00 AM
Abstract :
A high resolution light emitting diode (LED) array based on ordered n-type ZnO nanowire/p-type SiGe heterojunction was proposed. The pixel pitch of the LED array is about 15 μm, corresponding to a pixel density of 3175 dpi. The fabrication and characterizations of the developed LED device were studied in detail. It was shown that the electroluminescence emission of this LED device is mainly in infrared range, which is dominated by the band gap of the SiGe alloy.
Keywords :
"Zinc oxide","II-VI semiconductor materials","Light emitting diodes","Silicon germanium","Arrays","Heterojunctions","Silicon"
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
DOI :
10.1109/NANO.2015.7388687
