DocumentCode :
3734713
Title :
Modeling and simulation of In1−xGaAsx nanowire solar cells
Author :
Bogdan Popescu;Dan Popescu;Pietro Luppina;Treu Julian;Gregor Koblm?ller;Paolo Lugli;Stephen Goodnick
Author_Institution :
Institute for Nanoelectronics, Technical University Munich, Germany
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
728
Lastpage :
731
Abstract :
In this paper, we investigate the electrical and optical properties of novel InGaAs nanowire solar cells. Key features like high optical absorption and excellent charge carrier mobility make them an attractive candidate to established solar cell technologies. The aim of our study is gain a deeper understanding of the underlying physics involved and to identify the limiting factors in the device under study. We perform a detailed simulation study of a fabricated nanowire structure under typical illumination conditions, extracting key figures of merit like efficiency, short-circuit current and open circuit voltage; our values are in good agreement with recently reported nanowire solar cells. After having validated our simulation approach, different optimization techniques are investigated in order to maximize the performance of the solar cell.
Keywords :
"Photovoltaic cells","Optical device fabrication","Integrated circuit modeling","Junctions","Silicon","Mathematical model","III-V semiconductor materials"
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
Type :
conf
DOI :
10.1109/NANO.2015.7388711
Filename :
7388711
Link To Document :
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