DocumentCode :
3734743
Title :
A carrier-based analytic theory for electrical simulation of negative capacitance surrounding gate ferroelectric capacitor
Author :
Chunsheng Jiang; Renrong Liang; Jing Wang; Jun Xu
Author_Institution :
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
834
Lastpage :
837
Abstract :
A carrier-based electrostatic potential model was proposed for electrical simulation of negative capacitance (NC) surrounding gate ferroelectric capacitor with one-dimensional (1-D) Landau-Khalatnikov equation. Surface potential, total mobile charge per unit area, total gate capacitance and negative capacitance effect (characterized by the gain of surface potential) versus gate voltage were studied extensively by changing different device parameters. These parameters include the ferroelectric film thickness, channel radius and the insulator layer thickness. The calculated results obtained from the proposed model are beneficial to investigate the operating mechanisms of the NC surrounding gate ferroelectric transistors and to optimize their device performance.
Keywords :
"Logic gates","Capacitance","Electric potential","Insulators","Mathematical model","Ferroelectric films","Capacitors"
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
Type :
conf
DOI :
10.1109/NANO.2015.7388741
Filename :
7388741
Link To Document :
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