• DocumentCode
    3734758
  • Title

    Electrical properties and transport mechanisms in Ge-Sb-Te thin films for nanoelectronics

  • Author

    A. Sherchenkov;P. Lazarenko;A. Babich;N. Korobova;S. Timoshenkov;A. Yakubov;D. Terekhov;A. Shuliatyev;S. Kozyukhin;O. Boytsova

  • Author_Institution
    National Research University MIET, Zelenograd, Moscow, Russia
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    885
  • Lastpage
    888
  • Abstract
    Electrical, thermal properties, and transport mechanisms in Ge2Sb2Te5 (GST225) thin films were investigated. Crystallization temperature for thin films was estimated. It was established that investigated thin films have p-type conductivity. Temperature dependencies of the resistivity for investigated thin films were studied. Two-channel model of charge carrier transport was used for the modeling of the temperature dependencies of conductivities. Activation energies of conductivity, position of the trap level controlling transport mechanism, and the density of states for this level were estimated.
  • Keywords
    "Conductivity","Temperature measurement","Temperature dependence","Temperature","Charge carriers","Films","Phase change materials"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
  • Type

    conf

  • DOI
    10.1109/NANO.2015.7388756
  • Filename
    7388756
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734758