• DocumentCode
    3734763
  • Title

    FinHEMT: FinFET-based high electron mobility transistor with strained silicon channel

  • Author

    Sung-Ho Kim;Jong Yul Park;Kyung Rok Kim

  • Author_Institution
    School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Republic of Korea
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    905
  • Lastpage
    908
  • Abstract
    We report a novel FinFET-based high electron mobility transistor (FinHEMT) with a strained-silicon (s-Si) channel proposed by a simple Si-compatible fabrication process. Through TCAD device simulation, proposed FinHEMT can be used as high-performance low-power transistor with high on-current (> 1 mA/μm) and low off-current (~10 pA/μm). Channel electron mobility in s-Si FinHEMT is highly enhanced over 1000 cmWs, which is 4 times higher than that of FinFET.
  • Keywords
    "Conferences","Nanotechnology","Bismuth","Noise measurement"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
  • Type

    conf

  • DOI
    10.1109/NANO.2015.7388761
  • Filename
    7388761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734763