• DocumentCode
    3734769
  • Title

    Electrical simulator for devices based on quantum dot arrays

  • Author

    S. Illera;J. D. Prades;A. Cirera

  • Author_Institution
    MIND/IN2UB Departament d´Electr?nica, Universitat de Barcelona, C/Mart? i Franqu?s 1, E-08028, Spain
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    924
  • Lastpage
    927
  • Abstract
    We present an electron transport simulator to describe the electronic transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. It is based on the non-coherent rate equations and the local potential are computed within the self-consistent field regime. The method underlying the electrical transport model depends only on fundamental material parameters and the geometrical description of the system creating a simulator tool capable to describe realistic devices based on quantum dots. Two specific prototypical devices, an arbitrary array of QDs embedded in a matrix insulator and a transistor device based on QDs, are used to illustrate the kind of unique insight these numerical simulations can provide.
  • Keywords
    "Quantum dots","Silicon","Energy states","Electric potential","Mathematical model","Electrodes","Transistors"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
  • Type

    conf

  • DOI
    10.1109/NANO.2015.7388767
  • Filename
    7388767