Novel approach of top-down GaN nanorods fabrication

GaN nanorods have been formed by inductive coupled plasma (ICP) etching in BCl₃/Cl₂ plasma. Nanostructures were formed only in the initially titanium masked area, wherein the dimensions of mask pattern do not define dimensions of nanorods, but the region of structure formation only. It has been found that density of nanorods strongly depends on process parameters, such as RF and ICP power, and gas pressure. Possible mechanisms of nanorods formation have been suggested, without however decisive conclusion.