DocumentCode
3734793
Title
Well-aligned hydrothermally synthesized zinc oxide nanorods on p-gan without a seed layer
Author
Fulvio Caruso;Mauro Mosca;Roberto Macaluso;Claudio Cal?;Eric Feltin
Author_Institution
Dipartimento di Energia, ingegneria dell´Informazione e modelli Matematici, Universit? degli Studi di Palermo, Italy
fYear
2015
fDate
7/1/2015 12:00:00 AM
Firstpage
1012
Lastpage
1014
Abstract
Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on p-doped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.
Keywords
"Zinc oxide","II-VI semiconductor materials","Nanostructures","Scanning electron microscopy","Gallium nitride","Light emitting diodes","Substrates"
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
Type
conf
DOI
10.1109/NANO.2015.7388791
Filename
7388791
Link To Document