Title :
Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process
Author :
Yi-Chun Lee;Akio Higo; Chang Yong Lee;Cedric Thomas;Tomoyuki Tanikawa;Kanako Shojiki;Shigeyuki Kuboya;Ryuji Katayama;Takayuki Kiba; Peichen Yu;Ichiro Yamashita;Akihiro Murayama;Seiji Samukawa
Author_Institution :
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 TA Hsueh Road, Hsinchu 30010, Taiwan
fDate :
7/1/2015 12:00:00 AM
Abstract :
Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.
Keywords :
"Etching","Light emitting diodes","Scanning electron microscopy","Fabrication","Nanostructures","Iron"
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
DOI :
10.1109/NANO.2015.7388865
