Title :
Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps
Author :
Muhammed Ihab Schukfeh;Allan Hansen;Marc Tornow;Kristian Storm;Kimberly Dick Thelander;Claes Thelander;Lars Samuelson;Peter Hinze;Thomas Weimann;Nelia Wanderka
Author_Institution :
Institut f?r Halbleitertechnik, Technische Universit?t Braunschweig, Germany
fDate :
7/1/2015 12:00:00 AM
Abstract :
We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.
Keywords :
"Etching","III-V semiconductor materials","Indium phosphide","Nanowires","Electrodes","Image segmentation","Molecular electronics"
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
DOI :
10.1109/NANO.2015.7388924
