Title :
Multiscale approach for the study of optoelectronic properties of InGaN/GaN nanowire light-emitting diodes
Author :
F. Sacconi;F. Panetta;M. Auf der Maur;A. Di Carlo;A. Pecchia;M. Musolino;A. Tahraoui;L. Geelhaar;H. Riechert
Author_Institution :
Tiberlab Srl, Rome, Italy
fDate :
7/1/2015 12:00:00 AM
Abstract :
In this work we present a study of electronic and optoelectronic properties of InGaN/GaN nanowire (NW) light-emitting diodes (LEDs) with a multiscale parametric approach. InGaN alloy bandgap bowing parameters extracted from empirical tight-binding (ETB) calculations are used in continuous level 3D simulation models. Strain and transport calculations are performed and quantum k·p-based models yield transition energies. Calculated emission energies are compared with experimental data showing a qualitative agreement within the experimental uncertainties.
Keywords :
"Light emitting diodes","Metals","Photonic band gap","Gallium nitride","Strain","Solid modeling","Fluctuations"
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
DOI :
10.1109/NANO.2015.7388942