• DocumentCode
    3734968
  • Title

    Resistive switching: From concept to device optimization

  • Author

    L. Goux

  • Author_Institution
    imec, B-3001 Leuven, Belgium
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    17
  • Lastpage
    19
  • Abstract
    This paper reviews some essential aspects of the filamentary bipolar resistive switching concept, and how appropriate material design and technology development makes it possible to translate it into a very attractive memory device, opening pathways for future memory replacements on condition specific key roadblocks are overcome.
  • Keywords
    "Switches","Random access memory","Electrodes","Resistance","Tin","Very large scale integration"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
  • Type

    conf

  • DOI
    10.1109/NANO.2015.7388967
  • Filename
    7388967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734968