• DocumentCode
    3734970
  • Title

    Sol - gel Ni doped ZnO films: Effect of annealing temperature

  • Author

    T Ivanova;A Harizanova;T Koutzarova;B Vertruyen

  • Author_Institution
    Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Sofia, Bulgaria
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    250
  • Lastpage
    253
  • Abstract
    Uniform and transparent Ni doped ZnO films have been successfully deposited by sol-gel technology. The effect of annealing temperatures on film structure is studied by X-Ray diffraction (XRD) and FTIR spectroscopy. This work presents a study of the optical properties of nanocrystalline films of ZnO and nickel doped ZnO, thermally treated at the temperatures from 300 to 800°C. The ZnO and ZnO:Ni films are polycrystalline as Ni additive induces a higher degree of crystallization. The transparency of sol-gel ZnO:Ni films in visible spectral range is improved by nickel doping. The optical band gap is also estimated.
  • Keywords
    "Zinc oxide","II-VI semiconductor materials","Nickel","Annealing","Optical films","X-ray scattering"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
  • Type

    conf

  • DOI
    10.1109/NANO.2015.7388970
  • Filename
    7388970