DocumentCode :
3734970
Title :
Sol - gel Ni doped ZnO films: Effect of annealing temperature
Author :
T Ivanova;A Harizanova;T Koutzarova;B Vertruyen
Author_Institution :
Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Sofia, Bulgaria
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
250
Lastpage :
253
Abstract :
Uniform and transparent Ni doped ZnO films have been successfully deposited by sol-gel technology. The effect of annealing temperatures on film structure is studied by X-Ray diffraction (XRD) and FTIR spectroscopy. This work presents a study of the optical properties of nanocrystalline films of ZnO and nickel doped ZnO, thermally treated at the temperatures from 300 to 800°C. The ZnO and ZnO:Ni films are polycrystalline as Ni additive induces a higher degree of crystallization. The transparency of sol-gel ZnO:Ni films in visible spectral range is improved by nickel doping. The optical band gap is also estimated.
Keywords :
"Zinc oxide","II-VI semiconductor materials","Nickel","Annealing","Optical films","X-ray scattering"
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
Type :
conf
DOI :
10.1109/NANO.2015.7388970
Filename :
7388970
Link To Document :
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