Analytical drain current model for graphene metal-oxide semiconductor field-effect transistor

A physics based analytical model for double gate metal oxide semiconductor graphene field effect transistor (GFET) has been presented. We have derived the expression of drain to source current using the general physics of conventional silicon MOSFET. The explicit expression of drain current is very simple and few fitting parameters have been considered to obtain the I-V characteristics. This model is also applicable for top gated GFET. Results using our analytical model show very good agreement with the experimental results and result using NANOHUB tool. This model can be integrated in circuit simulation tools.