DocumentCode :
3736938
Title :
Enhancement of device performance with optimized absorber layer in CIGS solar cell
Author :
Sharmin Aktar Chowdhury;Shah Alam
Author_Institution :
Department of Applied Physics, Electronics & Communication Engineering, University of Chittagong, 4331, Bangladesh
fYear :
2015
Firstpage :
475
Lastpage :
479
Abstract :
Numerical simulation of CIGS solar cell has been carried out in this study to investigate the performance of the solar cell with different band-gap and thickness of the absorber layer. In this paper, we also introduce the effect of Ga content on solar cell material parameters. The aim of this work is to check the device performance like open circuit voltage, short circuit current density, fill-factor and efficiency with the change of thickness and band-gap of the absorber layer. It is shown that, by optimizing the CIGS absorber layer it is possible to achieve an AM 1.5G conversion efficiency of greater than 22% which is an increased value than presently reported.
Keywords :
"Compounds","Radiative recombination","Photoconductivity","Mathematical model","Dielectrics"
Publisher :
ieee
Conference_Titel :
Electrical Information and Communication Technology (EICT), 2015 2nd International Conference on
Print_ISBN :
978-1-4673-9256-3
Type :
conf
DOI :
10.1109/EICT.2015.7392000
Filename :
7392000
Link To Document :
بازگشت