DocumentCode
3737391
Title
An SiC inverter for high speed permanent magnet synchronous machines
Author
Martin Novák;Jaroslav Novák;Oleg Sivkov
Author_Institution
Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, Czech Technical University in Prague, Prague, Czech Republic
fYear
2015
Firstpage
2397
Lastpage
2402
Abstract
This paper present experimental results obtained during the construction of an SiC based inverter for high speed permanent magnet synchronous machines (PMSM). First a comparison between an IGBT and SiC modules used for the same application is presented. The modules static and switching losses are experimentally obtained and compared. The SiC module show significantly lower switching losses. Then the SiC inverter design is described and experimental results are shown. It is found that parasitic inductances in both the gate driver and DC intermediate circuit play a major role and need to be minimized. One procedure using vertically aligned PCB traces is described and measured results are presented. The presented SiC based inverter was successfully tested with the high speed PMSM up to the application full voltage 600V. It was also tested with a high switching frequency up to 500kHz although the target frequency is only 100kHz.
Keywords
"Silicon carbide","Inverters","Insulated gate bipolar transistors","Transistors","Logic gates","Switching loss","Loss measurement"
Publisher
ieee
Conference_Titel
Industrial Electronics Society, IECON 2015 - 41st Annual Conference of the IEEE
Type
conf
DOI
10.1109/IECON.2015.7392461
Filename
7392461
Link To Document