Achieving high efficiency using SiC MOSFETs and reduced output filter for grid-connected V2G inverter

This paper describes a comprehensive analysis of a three-phase two-level silicon carbide (SiC) MOSFET V2G inverter including the LCL filter design. The efficiency is compared between the SiC MOSFET and Si IGBT. Using a SiC device enables the inverter to operate at high switching frequency and this leads to improved efficiency up to 99.05% at 10 kHz and 97.71% at 100 kHz switching frequency. The output LCL filter is also designed based on a specific switching frequency and the filter value is most significantly reduced at the highest switching frequency. The SiC inverter and LCL filter is simulated using LTSpice and MATLAB Simulink.