DocumentCode :
3738717
Title :
Designing a new high Q fully CMOS tunable floating active inductor based on modified tunable grounded active inductor
Author :
Hadi Ghasemzadeh Momen;Metin Yazgi;Ramazan Kopru
Author_Institution :
Istanbul Technical University, Faculty of Electrical-Electronics Engineering, 34469 Maslak, Istanbul, Turkey
fYear :
2015
Firstpage :
1
Lastpage :
5
Abstract :
A new Tunable Floating Active Inductor (TFAI) based on modified Tunable Grounded Active Inductor (TGAI) is proposed. Multi regulated cascade stage is used in TGAI to boost gain of input impedance and inductor value thus the Q factor enhancement obtained. The arrangement of Multi-Regulated Cascade (MRC) stage is caused the input transistor which determines AI self-resonance frequency to be as small as possible and it is free of body effect which is crucial in sub-micron technology. Compared to traditional CMOS spiral inductors, the active inductor proposed in this paper can substantially improve its equivalent inductance and quality factor. This TFAI was designed using the AMS 0.18 um RF CMOS process, which demonstrates an adjustable quality factor of 10~567 with a 6~284 nH inductance. The Q factor and value of active inductor is adjusted with bias current and flexible capacitance (varactor), respectively. The self-resonance frequency for both grounded and floating AI is about 6.2 GHz. The proposed active inductor also shows wide dynamic range and higher quality factor compared to conventional floating active inductor circuits.
Keywords :
"Active inductors","Q-factor","Artificial intelligence","Inductance","Transistors","Integrated circuits"
Publisher :
ieee
Conference_Titel :
Electrical and Electronics Engineering (ELECO), 2015 9th International Conference on
Type :
conf
DOI :
10.1109/ELECO.2015.7394542
Filename :
7394542
Link To Document :
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