DocumentCode
3738894
Title
Proposal of compact analytical modeling for trigate junctionless nanowire transistors
Author
Fernando ?vila-Herrera;Antonio Cerdeira;Magali Estrada;Bruna Cardoso Paz;Marcelo Antonio Pavanello
Author_Institution
Secci?n de Electr?nica del Estado S?lido, Depto. Ingenier?a El?ctrica, CINVESTAV-IPN, M?xico D.F., Mexico
fYear
2015
Firstpage
1
Lastpage
4
Abstract
A compact analytical model for junctionless nanowire transistors is developed taking into account the fin height and including its capacitance. This model is based on a previous one for double-gate transistors just considering the dependence of the fin height and the short channel effects. The validation has been performed by 3D simulations for structures of 15 nm and 10 nm of height obtaining a very good agreement between modeled and simulated data.
Keywords
"Solid modeling","Transistors","Three-dimensional displays","Logic gates","Analytical models","Capacitance","Semiconductor process modeling"
Publisher
ieee
Conference_Titel
Power, Electronics and Computing (ROPEC), 2015 IEEE International Autumn Meeting on
Type
conf
DOI
10.1109/ROPEC.2015.7395131
Filename
7395131
Link To Document