• DocumentCode
    3741130
  • Title

    Study on simulation of 1060 nm quantum-well lasers with double mode expansion layers

  • Author

    Wei Liu;Lin Li;Yong Wang;Zhongliang Qiao;Zhanguo Li;Baoxue Bo;Xiaohui Ma;Guojun Liu

  • Author_Institution
    National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    313
  • Lastpage
    316
  • Abstract
    We have simulated a kind of 1060 nm quantum-well lasers with double mode expansion layers, threshold current of 158 mA and the far field vertical divergence angle of 13°. The far field vertical divergence angle can be as low as 10° with the threshold current of 266 mA. The effects of mode expansion layer on quantum-well lasers performance have been investigated.
  • Keywords
    "Threshold current","Optical waveguides","Quantum well lasers","Periodic structures","Waveguide lasers","Electric fields","Epitaxial layers"
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/ICoOM.2015.7398830
  • Filename
    7398830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3741130