Title :
Study on simulation of 1060 nm quantum-well lasers with double mode expansion layers
Author :
Wei Liu;Lin Li;Yong Wang;Zhongliang Qiao;Zhanguo Li;Baoxue Bo;Xiaohui Ma;Guojun Liu
Author_Institution :
National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China
fDate :
7/1/2015 12:00:00 AM
Abstract :
We have simulated a kind of 1060 nm quantum-well lasers with double mode expansion layers, threshold current of 158 mA and the far field vertical divergence angle of 13°. The far field vertical divergence angle can be as low as 10° with the threshold current of 266 mA. The effects of mode expansion layer on quantum-well lasers performance have been investigated.
Keywords :
"Threshold current","Optical waveguides","Quantum well lasers","Periodic structures","Waveguide lasers","Electric fields","Epitaxial layers"
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
DOI :
10.1109/ICoOM.2015.7398830
