Title :
Surface passivation on (100) oriented GaAs materials by hydrazine solution
Author :
Xu Liuyang;Gao Xin;Yuan Xuze;Cao Xiwen;Xia Xiaoyu;Qiao Zhongliang;Bo Baoxue
Author_Institution :
National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China
fDate :
7/1/2015 12:00:00 AM
Abstract :
To obtain a stable passivation layer with high performance, we use the highly alkaline hydrazine solution to passivate GaAs (100) surface, the native oxidation layer has been effectively removed. The PL intensity was found higher than that of the untreated sample, no obvious PL-intensity degradation was observed during a long period exposure to air.
Keywords :
"Gallium arsenide","Passivation","Surface contamination","Plasmas","Surface cleaning","Microelectronics"
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
DOI :
10.1109/ICoOM.2015.7398832
