DocumentCode
3741135
Title
GSMBE growth of InGaAsP step-graded composite collector structure applied to DHBT
Author
Likun Ai;Anhuai Xu;Shuxing Zhou;Ming Qi
Author_Institution
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
fYear
2015
fDate
7/1/2015 12:00:00 AM
Firstpage
330
Lastpage
333
Abstract
A new InP/InGaAs/InP DHBT structure with step-graded composite collector was designed in this work. Two InGaAsP layers with different band gaps were inserted between collector and base of DHBT to eliminate the electron blocking effect. The InP/InGaAs/InP DHBT structure was grown by gas source molecular beam epitaxy (GSMBE). Good crystalline quality of InGaAsP materials were obtained through optimizing the growth condition. The DHBT device with emitter area of 100×100μm2 and 0.8×15μm2 was fabricated, respectively. The offset voltage of 0.2V, BVCEO>4V, fT of 170GHz and fmax of 253GHz were achieved. These results indicate that the InP/InGaAs/InP DHBT is suitable for low power-dissipation and high power applications.
Keywords
"Indium phosphide","Silicon","DH-HEMTs","III-V semiconductor materials","Photonic band gap","Performance evaluation","Junctions"
Publisher
ieee
Conference_Titel
Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
Type
conf
DOI
10.1109/ICoOM.2015.7398835
Filename
7398835
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