• DocumentCode
    3741137
  • Title

    Fabrication of dielectric grating by holographic photolithograph

  • Author

    Siyuan Zhang;Zhen Ye;Zhanqi Gao;Yunyi Zhuang;Yongqin Hao;Yuan Feng;Zaijin Li;Yong Wang;Zhenfu Ma

  • Author_Institution
    National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    338
  • Lastpage
    340
  • Abstract
    Holographic photolithograph is adopted to fabricate dielectric grating of SiO2 on GaAs substrates. Scanning electron microscopy and atomic force microscopy show that the grating has a period of 528 nm, duty cycle of 0.5, thickness of 90nm, with perfect surface morphology, good fringe continuity and uniformity.
  • Keywords
    "Gratings","Lithography","Resists","Scanning electron microscopy","Surface morphology","Dielectrics","Laser beams"
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/ICoOM.2015.7398837
  • Filename
    7398837
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3741137