Title :
Fabrication of dielectric grating by holographic photolithograph
Author :
Siyuan Zhang;Zhen Ye;Zhanqi Gao;Yunyi Zhuang;Yongqin Hao;Yuan Feng;Zaijin Li;Yong Wang;Zhenfu Ma
Author_Institution :
National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022
fDate :
7/1/2015 12:00:00 AM
Abstract :
Holographic photolithograph is adopted to fabricate dielectric grating of SiO2 on GaAs substrates. Scanning electron microscopy and atomic force microscopy show that the grating has a period of 528 nm, duty cycle of 0.5, thickness of 90nm, with perfect surface morphology, good fringe continuity and uniformity.
Keywords :
"Gratings","Lithography","Resists","Scanning electron microscopy","Surface morphology","Dielectrics","Laser beams"
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
DOI :
10.1109/ICoOM.2015.7398837
