DocumentCode
3741142
Title
High-power high beam-quality tapered semiconductor laser BARs
Author
Taofei Pu;Jing Zhang;Jing Zhang
Author_Institution
National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin, China
fYear
2015
fDate
7/1/2015 12:00:00 AM
Firstpage
355
Lastpage
359
Abstract
For improving the beam quality, the ridge-waveguide structure is introduced to ensure the output in single mode of the laser BAR. In addition, the single mode wave is amplified in power by the tapered amplification. Then the high powerful light output in ten class watts is realized while it has the property of high beam quality. The isolative groove of the shape X is used to restrict the light feedback around the ridge and tapered section. According to theoretical analysis, the measuring devices are designed for measuring the beam quality of the tapered laser. And calculating the numerical value of the beam quality of the tapered laser BARs. The max output powers is 37.52W, the slope efficiency is 0.653W/A, the beam quality parameter M2 maintain 210 around.
Keywords
"Optical waveguides","Laser beams","Diffraction","Indexes","Epitaxial growth","Semiconductor waveguides","Electrodes"
Publisher
ieee
Conference_Titel
Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
Type
conf
DOI
10.1109/ICoOM.2015.7398842
Filename
7398842
Link To Document