Title :
Preparation of hole array and dot array by holographic lithography system
Author :
Zhen Ye;Yong Wang;Zhanqi Gao;Yunyi Zhuang;Siyuan Zhang;Yongqin Hao;Yuan Feng;Zaijin Li;Yang Li;Jiabin Zhang;Xiaohua Wang
Author_Institution :
National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
fDate :
7/1/2015 12:00:00 AM
Abstract :
The periodic array is fabricated on GaAs substrate by holographic lithography and wet etching. The double exposure for hole array in holographic lithography is adopted to optimized exposure time of 60s, and the optimal time of dot array is 80s. Wet etching solution with 1:1:10 volume ratio of H3PO4, H2O2 and H2O is adopted to etch the hole array for 30 s, and to etch the dot array for 20 s. Images of scanning electron microscopy (SEM) show that the hole array and dot array has a period of 528 nm, with perfect surface morphology, good fringe continuity and uniformity.
Keywords :
"Arrays","Lithography","Resists","Surface morphology","Etching","Substrates"
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
DOI :
10.1109/ICoOM.2015.7398858