Analysis and optimal design of SiGe HBT low noise amplifier for GNSS receiver

The paper presents a SiGe HBT low noise amplifier (LNA) for GNSS (Global Navigation Satellite System) receiver. The optimal design of the LNA was fabricated in HHNEC 180 nmSiGe BiCMOS technology. And the chip tested on PCB has demonstrated that the LNA obtains, at the GPS frequency point 1575.42MHz, a input return loss (S11) of -12dB, a power gain (S21) of 20.2dB, a noise figure (NF) of 0.86dB, a input 1dB compression point (IP1dB) of -13.5dBmand a input third-order intercept point (IIP3) of -4dBm while consuming only 4.2 mA from 1.8 V power supply. And the chip area is about 550μm×570μm.