DocumentCode
3741760
Title
A novel cavity-backed slot antenna on InP
Author
Jian Yu; Guoqing Luo
Author_Institution
Hangzhou Dianzi University, 310018, China
fYear
2015
Firstpage
252
Lastpage
254
Abstract
In this paper, a novel linear polarized cavity-backed antenna based on normal InP HBT technology is proposed and simulated. In this design, half-mode substrate integrated waveguide (HMSIW) technique is used to create a radiating aperture, which helps minify the InP substrate and reduce the cost. The proposed antenna is numerically investigated using HFSS. The simulated results show that the proposed antenna has an impedance bandwidth about 3 GHz at the center frequency of 60 GHz, in which the gain and radiation efficiency of the proposed cavity-backed antennas is beyond 3.8 dBi and 89%, respectively. Compared with the conventional on chip antenna based on CMOS technology, this novel antenna´s gain and radiation efficiency has been largely increased.
Keywords
"CMOS integrated circuits","CMOS technology","Antennas","Indium phosphide","III-V semiconductor materials","Resonant frequency","Yttrium"
Publisher
ieee
Conference_Titel
Communication Technology (ICCT), 2015 IEEE 16th International Conference on
Print_ISBN
978-1-4673-7004-2
Type
conf
DOI
10.1109/ICCT.2015.7399835
Filename
7399835
Link To Document