• DocumentCode
    3741764
  • Title

    Study of the W-band monolithic low-noise amplifier

  • Author

    Lili Dang; Zhiqun Cheng; Tang Liu; Jian Zhang; Zhiming Fang; Ruirui Chen

  • Author_Institution
    Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, 310018, China
  • fYear
    2015
  • Firstpage
    266
  • Lastpage
    269
  • Abstract
    This paper demonstrates a W-band monolithic Low noise amplifier which is based on UMS company 0.1μm GaAs pHEMT process. The circuit is designed with three-stages amplifiers to meet higher power gain. LNA size is only 1 × 1.7mm yet. The measured results of LNA show the power gain of 12 dB, low NF of 4.7dB, which are consistent well with the simulation ones.
  • Keywords
    "PHEMTs","MMICs","Impedance matching","Companies","Performance evaluation","Foundries","Electron tubes"
  • Publisher
    ieee
  • Conference_Titel
    Communication Technology (ICCT), 2015 IEEE 16th International Conference on
  • Print_ISBN
    978-1-4673-7004-2
  • Type

    conf

  • DOI
    10.1109/ICCT.2015.7399839
  • Filename
    7399839
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3741764