A new method of extrinsic component parameters extraction for RF LDMOS transistors

A new method for extraction extrinsic component parameters of high power RF LDMOS transistor is present in this paper. This method regards the manifolds as a part of extrinsic capacitances, and uses Nano-fabrication instrument to segment the capacitances with the other parameters. It not only simplifies the procedure for extraction, but also keeps the accuracy for extracting the values of parameters. This method achieves a great agreement between measured and simulated S-parameters in the frequency range over from 0.2 to 2.5 GHz.