A GaAs/AlGaAs based Asymmetrical DBS (ADBS) RTD

To explore the application prospect of GaAs/AlGaAs based Asymmetric DBS (double barriers) (ADBS) RTD (resonate tunneling diode), its transfer coefficient and RT (resonate tunneling) current density were modeled through solving of its Schrödinger equation with the method of Airy functions. Then the influences of higher barrier height on its DC characteristic and operation principles at positive and negative bias conditions were comparatively studied through simulation experiments with TCAD. The experimental results and analyses indicate that its current-voltage characteristic at negative bias is distinctively different from that at positive bias. The former appears obviously lower valley current and voltage hence lower function voltage, bigger PVCR (ratio between peak and valley currents) and broader valley bottom with similar peak current and voltage to the latter. Therefore, negative biased GaAs/AlGaAs based ADBS RTD might be more suitable for low power loss and high speed MVL (multi-valued logic) applications.