• DocumentCode
    3742587
  • Title

    An approximate condition to avoid reverse leakage current in ReRAM crossbar design

  • Author

    Yelim Youn;Jae-Yoon Sim;Hong-June Park;Byungsub Kim

  • Author_Institution
    Department of Electronics Engineering, Pohang University of Science and Technology (POSTECH) Pohang, Korea
  • fYear
    2015
  • Firstpage
    67
  • Lastpage
    68
  • Abstract
    This paper presents an approximate condition to avoid reverse leakage current during read operation in ReRAM crossbar design. To derive the condition, the reverse leakage current which flows through the unselected cells from the unselected wordlines to the selected bitline is examined with various sizes of ReRAM crossbars. The results show that the reverse leakage current flows when design parameters meet an inequality condition. We derived the approximate inequality condition in terms of the design parameters to aid ReRAM crossbar design. Comparison with simulation and the derived formula demonstrates the accuracy of our formula and shows that our formula can be a useful rule-of-thumb guideline to avoid the reverse leakage current in ReRAM crossbar design.
  • Keywords
    "Leakage currents","Arrays","Resistance","Sensors","Guidelines","Electrodes","Computational modeling"
  • Publisher
    ieee
  • Conference_Titel
    SoC Design Conference (ISOCC), 2015 International
  • Type

    conf

  • DOI
    10.1109/ISOCC.2015.7401656
  • Filename
    7401656