DocumentCode
3742587
Title
An approximate condition to avoid reverse leakage current in ReRAM crossbar design
Author
Yelim Youn;Jae-Yoon Sim;Hong-June Park;Byungsub Kim
Author_Institution
Department of Electronics Engineering, Pohang University of Science and Technology (POSTECH) Pohang, Korea
fYear
2015
Firstpage
67
Lastpage
68
Abstract
This paper presents an approximate condition to avoid reverse leakage current during read operation in ReRAM crossbar design. To derive the condition, the reverse leakage current which flows through the unselected cells from the unselected wordlines to the selected bitline is examined with various sizes of ReRAM crossbars. The results show that the reverse leakage current flows when design parameters meet an inequality condition. We derived the approximate inequality condition in terms of the design parameters to aid ReRAM crossbar design. Comparison with simulation and the derived formula demonstrates the accuracy of our formula and shows that our formula can be a useful rule-of-thumb guideline to avoid the reverse leakage current in ReRAM crossbar design.
Keywords
"Leakage currents","Arrays","Resistance","Sensors","Guidelines","Electrodes","Computational modeling"
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2015 International
Type
conf
DOI
10.1109/ISOCC.2015.7401656
Filename
7401656
Link To Document