• DocumentCode
    3742720
  • Title

    A low noise amplifier in 130 nm SOI CMOS for ISM applications

  • Author

    Jiang-An Han;Zhi-Hui Kong;Bo Yu;Wan-Lan Yang;Kaixue Ma;Kiat Seng Yeo

  • Author_Institution
    School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
  • fYear
    2015
  • Firstpage
    203
  • Lastpage
    204
  • Abstract
    This paper introduces design and implementation of microwave low noise amplifier (LNA) in 130 nm SOI CMOS technology. The LNA operating around 5.8 GHz is design for ISM 5.8GHz applications. In schematic design, the CMOS transistors are stacked for compact size. In layout verification, all inductors are verified by 3D electromagnetic simulator. The fabricated chip has achieved 7.0 gain and 3.1 dB noise figure in measurement. The size of this chip is only about 0.58×0.32 mm2.
  • Keywords
    "Inductors","CMOS integrated circuits","Silicon-on-insulator","CMOS technology","Transistors","Gain","Noise figure"
  • Publisher
    ieee
  • Conference_Titel
    SoC Design Conference (ISOCC), 2015 International
  • Type

    conf

  • DOI
    10.1109/ISOCC.2015.7401789
  • Filename
    7401789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3742720