DocumentCode :
37434
Title :
1.3- \\mu m Silicon Optical Switch Integrated With Germanium Photodiodes for Stable Operation
Author :
Suzuki, Takumi ; Motoya, Toru ; Yamaoka, Masanao ; Kato, Toshihiko ; Aoki, Hidetaka ; Tanaka, Shoji
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo, Japan
Volume :
27
Issue :
3
fYear :
2015
fDate :
Feb.1, 1 2015
Firstpage :
304
Lastpage :
306
Abstract :
A carrier-injection-type silicon optical switch (OSW) monolithically integrated with germanium photodiodes (Ge-PDs) is proposed and operated at a wavelength of 1310 nm. The Ge-PDs used for monitoring photocurrent achieve stable switching control. A 4 × 4 silicon OSW, ideally a path-independent-loss type, was fabricated on a silicon-on-insulator substrate. Measured loss variations of all 16 paths were ~3 dB, and the switching response of the OSW was faster than 10 ns. Feedback control of injection current of the OSW was demonstrated. This result shows that the proposed closed-loop feedback control by monitoring photocurrents of Ge-PDs has the potential for stable operation of matrix OSWs.
Keywords :
elemental semiconductors; germanium; integrated optoelectronics; optical losses; optical switches; photoconductivity; photodiodes; silicon; Si; Si-Ge; carrier-injection-type silicon optical switch; closed-loop feedback control; germanium photodiodes; injection current feedback control; loss variation; monolithic integration; photocurrent; silicon-on-insulator substrate; stable operation; stable switching control; wavelength 1.3 mum; wavelength 1310 nm; Insertion loss; Loss measurement; Monitoring; Optical switches; Optical waveguides; Silicon; Optical switches; integrated optics; silicon devices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2014.2370061
Filename :
6954403
Link To Document :
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