A GaAs-Based Hybrid Integration of a Tunneling Diode and a 1060-nm Semiconductor Laser

Author

Junping Mi ; Hongyan Yu ; Huolei Wang ; Shaoyang Tan ; Weixi Chen ; Ying Ding ; Jiaoqing Pan

Author_Institution

Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China

Volume

27

Issue

2

fYear

2015

fDate

Jan.15, 15 2015

Firstpage

169

Lastpage

172

Abstract

We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at ~1060 nm, on GaAs substrate. The low-frequency operation of the integrated circuit was measured and obvious negative differential resistance regions were shown in the electrical and optical output. The electrical and optical bistability were measured, and the peak and valley voltage were 2.03 and 2.17 V, respectively. A 140-mV-wide hysteresis loop and an optical on/off ratio of 21 dB were obtained. The device has potential applications in biomedicine and optical interconnects.

Keywords

III-V semiconductors; gallium arsenide; integrated optics; integrated optoelectronics; microwave photonics; optical bistability; optical interconnections; quantum well lasers; tunnel diodes; GaAs; GaAs substrate; GaAs-based hybrid integration; hybrid integrated tunneling diode; hysteresis loop; integrated circuit; low-frequency operation; negative differential resistance regions; optical bistability; optical interconnects; optical on/off ratio; optical output; quantum well laser diode; semiconductor laser; tunneling diode; Biomedical optical imaging; Diode lasers; Gallium arsenide; Optical bistability; Optical fibers; Oscillators; Semiconductor lasers; GaAs; Hybrid integration; hybrid integration; microwave photonics; optical bistability; oscillator; semiconductor lasers; tunnel diode;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2364073

Filename

6930721