Analysis and design of high performance wireless power delivery using on-chip octagonal inductor in 65-nm CMOS

This paper analyzes and designs inductive coupling power delivery (ICPD) system for 3-D stacked chips in SMIC 65-nm CMOS process. Two shapes of inductors, the rectangular and the octagonal inductor, are compared. Fully customized octagonal inductors with 500 μm diameter are optimized to improve power delivery efficiency. An octagonal inductor based ICPD consisting transmitter and receiver circuit is proposed by using H-bridge architecture and NMOS cross-gate rectifier. Simulation results show that the received power is 12 mW with a delivery efficiency of 12% and a power density of 59.5 mW/mm². In order to achieve the higher power at the receiver side in some special applications, a four parallel connected inductors based wireless power link is designed, which reaches 34.2 mW.