Radiation-Hardened Low-Level Offset Operational Amplifiers

Author

Piccin, Yohan ; Lapuyade, Herve ; Deval, Yann ; Morche, Colette ; Seyler, Jean-Yves ; Goutti, Frederic ; Masson, Thierry

Author_Institution

IMS Lab., Talence, France

Volume

61

Issue

3

fYear

2014

fDate

Jun-14

Firstpage

1451

Lastpage

1458

Abstract

Continuous-time auto-zero and ping-pong operational amplifiers dedicated to space applications are proposed. The circuits were implemented in a standard 130 nm CMOS technology. They have been irradiated to evaluate their low-dose-rate radiation sensitivity. Measurement results show that these architectures can provide an input offset voltage lower than 1 μV. Comparisons with commercial low offset amplifiers are made to show the interest of the auto-offset cancellation for space applications.

Keywords

CMOS integrated circuits; low-power electronics; operational amplifiers; radiation hardening (electronics); auto-offset cancellation; commercial low offset amplifiers; continuous-time auto-zero ping-pong operational amplifiers; input offset voltage; low-dose-rate radiation sensitivity; radiation-hardened low-level offset operational amplifiers; space applications; standard CMOS technology; Capacitors; Circuit stability; Clocks; Frequency estimation; Laboratories; Simulation; Voltage measurement; Auto-zero; continuous-time; offset; operational amplifier; ping-pong;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2321772

Filename

6825914