DocumentCode :
37463
Title :
Radiation-Hardened Low-Level Offset Operational Amplifiers
Author :
Piccin, Yohan ; Lapuyade, Herve ; Deval, Yann ; Morche, Colette ; Seyler, Jean-Yves ; Goutti, Frederic ; Masson, Thierry
Author_Institution :
IMS Lab., Talence, France
Volume :
61
Issue :
3
fYear :
2014
fDate :
Jun-14
Firstpage :
1451
Lastpage :
1458
Abstract :
Continuous-time auto-zero and ping-pong operational amplifiers dedicated to space applications are proposed. The circuits were implemented in a standard 130 nm CMOS technology. They have been irradiated to evaluate their low-dose-rate radiation sensitivity. Measurement results show that these architectures can provide an input offset voltage lower than 1 μV. Comparisons with commercial low offset amplifiers are made to show the interest of the auto-offset cancellation for space applications.
Keywords :
CMOS integrated circuits; low-power electronics; operational amplifiers; radiation hardening (electronics); auto-offset cancellation; commercial low offset amplifiers; continuous-time auto-zero ping-pong operational amplifiers; input offset voltage; low-dose-rate radiation sensitivity; radiation-hardened low-level offset operational amplifiers; space applications; standard CMOS technology; Capacitors; Circuit stability; Clocks; Frequency estimation; Laboratories; Simulation; Voltage measurement; Auto-zero; continuous-time; offset; operational amplifier; ping-pong;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2321772
Filename :
6825914
Link To Document :
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