Study of polarization resolved absorption in anisotropic quantum dots

In this work, we study the polarization sensitive absorption in anisotropic InGaAs/GaAs quantum dot for bound to bound transitions of holes in valence band. It is found that the absorption coefficient for the transitions under consideration are sensitive to in-plane polarization of light due to shape anisotropy of the quantum dot. The response wavelength for different aspect ratio (Radius/height) of quantum dot are found in the range of mid and far-infrared region which are suitable for THz applications.